<meter id="pryje"><nav id="pryje"><delect id="pryje"></delect></nav></meter>
          <label id="pryje"></label>

          新聞中心

          EEPW首頁 > 模擬技術 > 設計應用 > 一種用于射頻和微波測試系統(tǒng)的GaAsSb雙異質結雙極晶體管集

          一種用于射頻和微波測試系統(tǒng)的GaAsSb雙異質結雙極晶體管集

          作者: 時間:2011-04-16 來源:網(wǎng)絡 收藏
          l., “Dry etching of deep backside vias in InP,” in Proc. GaAs Mantech, pp.269-272, 2003.
          [5]G. He, J. Howard, M. Le, P. Partyka, B. Li, G. Kim, et al., “Self-aligned InP DHBT with fT and fmax over 300 GHz in a new manufacturable technology,” IEEE Electron Device Lett., vol. 25, no. 8, pp. 520-522, 2004.
          [6]S. Tsunashima, K. Murata, M. Ida, K. Kurishima, T. Kosugi, T. Enoki, et al., “A 150-GHz dynamic frequency divider using InP/InGaAs DHBTs,” in Proc. GaAs IC Symposium 2003, pp. 284-287, 2003.
          [7]J. Godin, A. Konczykowska, M. Riet, P. Berdaguer, J. Moulu, V. Puyal, et al., “InP DHBT mixed-signal specific ICs for advanced 40 Gb/s transmitters,” in Proc. CSICS 2004, pp. 89-92, 2004.
          [8]D.A. Hitko, T. Hussain, J.F. Jensen, Y. Royter, S.L. Morton, D.S. Matthews, et al., “A low power (45mW/latch) static 150GHz CML divider”, in Proc. CSICS 2004, pp. 167-170, 2004.
          [9]R. E. Makon, K. Schneider, R. Driad, M. Lang, R. Aidam, R. Quay, and Q. Weimann, “Fundamental low phase noise InP-based DHBT VCOs with high output power operating up to 75 GHz”, in Proc. CSICS 2004, pp. 167-170, 2004.
          [10]D. Sawdai, E. Kaneshiro, A. Gutierrez-Aitken, P.C. Grossman, K. Sato, et al., “High performance, high yield InP DHBT production process for 40 Gbps applications,” in Proc. IPRM 2001, pp. 493-496, 2001.
          [11]Z. Griffith, M. Dahlstrom, M.J.W. Rodwell, X.-M. Fang, D. Lubyshev, Y. Wu, et al., “InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz fT and 505-GHz fmax,” IEEE Electron Device Lett., vol. 26, no. 1, pp. 11-13, 2005
          [12]M. Urteaga, R. Pierson, P. Rowell, B. Brar, Z. Griffith, M. Dahlstrom, et al., “Wide bandwidth InP DHBT technology utilizing dielectric sidewall spacers,” in Proc. IPRM 2004, pp. 667-670, 2004.
          [13]M.W. Dvorak, C.R. Bolognesi, O.J. Pitts, and S.P. Watkins, “300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVceo ≥ 6V,” IEEE Electron Device Lett., vol. 22, no. 8, pp. 361-363, 2001.
          [14]B.F. Chu-Kung and M. Feng, “InP/GaAsSb type-II DHBTs with fT > 350 GHz,” Electron. Lett., vol. 40, no. 20, pp. 1305-1306, 2004.
          [15]X. Zhu, J. Wang, and D. Pavlidis, “First demonstration of low-power monolithic transimpedance amplifier using InP/GaAsSb/InP DHBTs,” in Proc. MTT-2005, Paper TU1D-6, 2005.
          [16]A. Konczykowska, M. Riet, P. Berdaguer, P. Bove, M. Kahn, and J. Godin, “40 Gbit/s digital IC fabricated using InP/GaAsSb/InP DHBT technology,” Electronics Lett., vol. 41, no. 16, pp. 123-123, 2005.
          [17]E.M. Cherry and D.E. Hooper, “The design of wide-band transistor feedback amplifiers,” Inst. Elec. Eng. Proc., vol. 110, no. 2, pp. 375-389, 1963
          [18]R. Karlquist, C. Hutchinson, T. Marshall, and R. Van Tuyl, “A frequency agile 40 Gb/s half rate linear phase detector for data jitter measurement,” in Proc. CSICS 2005, to be published.


          上一頁 1 2 下一頁

          評論


          相關推薦

          技術專區(qū)

          關閉
          看屁屁www成人影院,亚洲人妻成人图片,亚洲精品成人午夜在线,日韩在线 欧美成人 (function(){ var bp = document.createElement('script'); var curProtocol = window.location.protocol.split(':')[0]; if (curProtocol === 'https') { bp.src = 'https://zz.bdstatic.com/linksubmit/push.js'; } else { bp.src = 'http://push.zhanzhang.baidu.com/push.js'; } var s = document.getElementsByTagName("script")[0]; s.parentNode.insertBefore(bp, s); })();