IPM自舉電路設(shè)計(jì)過程中的關(guān)鍵問題研究
由上述分析可知,本項(xiàng)目采用的自舉電容初始充電的方法簡(jiǎn)單實(shí)用,在實(shí)際項(xiàng)目應(yīng)用中取得良好的效果。
本文分析了自舉電路的基本原理,并在此基礎(chǔ)上,通過實(shí)際項(xiàng)目,介紹了自舉電路各元器件的選型,通過將初始充電控制程序放在PWM更新函數(shù)中,保證了充電的實(shí)時(shí)性,在應(yīng)用中取得了良好的IPM驅(qū)動(dòng)效果,為自舉電容的初始充電提供了一個(gè)簡(jiǎn)單實(shí)用可靠的方案??傊?,要在理論指導(dǎo)的基礎(chǔ)上,使得控制算法和硬件參數(shù)緊密相關(guān),并在實(shí)際系統(tǒng)反復(fù)調(diào)試并最終確定參數(shù),以便最大程度地保證電路的可靠性。
參考文獻(xiàn)
?。?] 李正中,孫德剛。高壓浮動(dòng)MOSFET柵極驅(qū)動(dòng)技術(shù)[J]。通信電源技術(shù),2003(3):37-40.
?。?] ?ZKILIC M C.HONSBERG M,RADKE T.A novel intelligent power module(IPM) in a compact transfer mold package with new high voltage integrated circuit(HVIC) and integrated bootstrap diodes[C].IEEE 14th International Power Electronics and Motion Control Conference,EPE-PEMC 2010.
?。?] PARL S,JAHNS T.M.A self boost charge pump topology for a gate drive high-side power supply[J].IEEE Trans. on Power Electronics,2005,20(2):300-307.
?。?] ALI R,DAUT I,TAIB S,et al.Design of high-Side MOSFET driver using discrete components for 24 Voperation[J].IEEE The 4th International Power Engineering and Optimization Conference.(PEOCO2010),Shah Alam,Selangor,MALAYSIA: 23-24 2010.
電容相關(guān)文章:電容原理
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