具有高溫工作能力的1700V SPT+ IGBT和二極管芯片組

[1] M. Rahimo et al., “SPT+, the Next Generation of Low-Loss HV-IGBTs” Proc. PCIM’05, Nürnberg, Germany, 2005.

[2] A. Kopta et al., “6500V SPT+ HiPak Mudules Rated at 750A” Proc. PCIM’08, Nürnberg, Germany,2008.

[3] V.Macary, G.Charitat, M.Bafleur, J.Buxo, P.Rossel “Comparison between Biased and Floating Guard Rings Used as Junction Termination Technique”, Proc. ISPSD’92, Tokyo, Japan, May 1992.

[4] J. Lutz, U. Scheuermann, “Advantage of the New Controlled Axial Lifetime Diode“, Proc. PCIM’94 Nürnberg, Germany, 1994.

[5] P. Hazdra, V.Komarnitskyy, “Lifetime control in silicon power P-i-N diode by ion irradiation: suppression of undesired leakage”, Microelectronics Journal, Volume 37, Issue 3 March 2006.

[6] M. Rahimo et al., "Switching-Self-Clamping-Mode “SSCM”, a breakthrough in SOA performance for high voltage IGBTs and Diodes" ISPSD'04, Japan, 2004.

原文作者和出處

C. Corvasce, A.Kopta, M. Rahimo, A. Baschnagel, S. Geissmann, R. Schnell,

ABB Switzerland Ltd, Semiconductors, Fabrikstrasse 3, CH - 5600 Lenzburg, Switzerland

Tel: +41 58 586 17 74, email:chiara.corvasce@ch.abb.com■