HID燈鎮(zhèn)流器中UniFET II MOSFET的性能和效率
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如表1所示，UniFET II MOSFET系列具有較好的反向恢復性能。 使用普通MOSFET和FRD的傳統(tǒng)解決方案與UniFET II Ultra FRFET MOSFET之間的直通電流比較結(jié)果如圖12所示。 在使用2個普通MOSFET和4個FRD的傳統(tǒng)解決方案中，測得的反向恢復電流峰值為11.44 A?！ ?/p>本文引用地址：http://www.ex-cimer.com/article/142700.htm
結(jié)論
在本文中，介紹了將全新平面MOSFET(UniFET II MOSFET)用于HID燈鎮(zhèn)流器的混頻全橋逆變器來實現(xiàn)更高的可靠性。 UniFET II MOSFET具有出色的dv/dt強度、反向恢復特性(比如：恢復時間短、反向恢復電流低)以及較低的電荷。 因此，在注重MOSFET體二極管性能的開關(guān)逆變器應用中，它可確保更高的可靠性。 為了驗證新MOSFET的有效性，用帶混頻全橋逆變器的150 W室內(nèi)HID燈鎮(zhèn)流器進行了實驗。 實驗結(jié)果表明，UniFET II MOSFET可以提高逆變器系統(tǒng)的可靠性，同時還可以通過去除其他二極管降低制造成本。
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